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SI4812BDY-T1-GE3

SI4812BDY-T1-GE3 SI4812BDY-T1-GE3

For Reference Only

Part Number SI4812BDY-T1-GE3
PNEDA Part # SI4812BDY-T1-GE3
Manufacturer Vishay Siliconix
Description MOSFET N-CH 30V 7.3A 8-SOIC
Unit Price
  • 1$ 0.0000
  • 100$ 0.0000
  • 500$ 0.0000
  • 1000$ 0.0000
  • 2500$ 0.0000
In Stock 3,942
Warehouses USA, Europe, China, Hong Kong SAR
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery
Estimated Delivery Jun 21 - Jun 26 (Choose Expedited Shipping)
Warranty Up to 1 year [PNEDA-Warranty]*

SI4812BDY-T1-GE3 Resources

Brand Vishay Siliconix
Mfr. Part NumberSI4812BDY-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI4812BDY-T1-GE3, SI4812BDY-T1-GE3 Datasheet (Total Pages: 8, Size: 181.81 KB)
PDFSI4812BDY-T1-E3 Datasheet Cover
SI4812BDY-T1-E3 Datasheet Page 2 SI4812BDY-T1-E3 Datasheet Page 3 SI4812BDY-T1-E3 Datasheet Page 4 SI4812BDY-T1-E3 Datasheet Page 5 SI4812BDY-T1-E3 Datasheet Page 6 SI4812BDY-T1-E3 Datasheet Page 7 SI4812BDY-T1-E3 Datasheet Page 8

SI4812BDY-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesLITTLE FOOT®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C7.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs16mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)1.4W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

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