Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI4816BDY-T1-GE3

SI4816BDY-T1-GE3

For Reference Only

Part Number SI4816BDY-T1-GE3
PNEDA Part # SI4816BDY-T1-GE3
Description MOSFET 2N-CH 30V 5.8A 8-SOIC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 22,818
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI4816BDY-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI4816BDY-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI4816BDY-T1-GE3, SI4816BDY-T1-GE3 Datasheet (Total Pages: 12, Size: 194.15 KB)
PDFSI4816BDY-T1-GE3 Datasheet Cover
SI4816BDY-T1-GE3 Datasheet Page 2 SI4816BDY-T1-GE3 Datasheet Page 3 SI4816BDY-T1-GE3 Datasheet Page 4 SI4816BDY-T1-GE3 Datasheet Page 5 SI4816BDY-T1-GE3 Datasheet Page 6 SI4816BDY-T1-GE3 Datasheet Page 7 SI4816BDY-T1-GE3 Datasheet Page 8 SI4816BDY-T1-GE3 Datasheet Page 9 SI4816BDY-T1-GE3 Datasheet Page 10 SI4816BDY-T1-GE3 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SI4816BDY-T1-GE3 Datasheet
  • where to find SI4816BDY-T1-GE3
  • Vishay Siliconix

  • Vishay Siliconix SI4816BDY-T1-GE3
  • SI4816BDY-T1-GE3 PDF Datasheet
  • SI4816BDY-T1-GE3 Stock

  • SI4816BDY-T1-GE3 Pinout
  • Datasheet SI4816BDY-T1-GE3
  • SI4816BDY-T1-GE3 Supplier

  • Vishay Siliconix Distributor
  • SI4816BDY-T1-GE3 Price
  • SI4816BDY-T1-GE3 Distributor

SI4816BDY-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesLITTLE FOOT®
FET Type2 N-Channel (Half Bridge)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C5.8A, 8.2A
Rds On (Max) @ Id, Vgs18.5mOhm @ 6.8A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs10nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max1W, 1.25W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

The Products You May Be Interested In

SI7980DP-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Half Bridge)

FET Feature

Standard

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

8A

Rds On (Max) @ Id, Vgs

22mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

27nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

1010pF @ 10V

Power - Max

19.8W, 21.9W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® SO-8 Dual

Supplier Device Package

PowerPAK® SO-8 Dual

IPG20N06S4L11AATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

Automotive, AEC-Q101, OptiMOS™

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

20A

Rds On (Max) @ Id, Vgs

11.2mOhm @ 17A, 10V

Vgs(th) (Max) @ Id

2.2V @ 28µA

Gate Charge (Qg) (Max) @ Vgs

53nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

4020pF @ 25V

Power - Max

65W

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount, Wettable Flank

Package / Case

8-PowerVDFN

Supplier Device Package

PG-TDSON-8-10

NTMD4N03R2G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

4A

Rds On (Max) @ Id, Vgs

60mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

16nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

400pF @ 20V

Power - Max

2W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOIC

DMG1016V-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

870mA, 640mA

Rds On (Max) @ Id, Vgs

400mOhm @ 600mA, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.74nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

60.67pF @ 16V

Power - Max

530mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Supplier Device Package

SOT-563

UPA2384T1P-E1-A

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

-

FET Feature

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

-

Operating Temperature

-

Mounting Type

-

Package / Case

-

Supplier Device Package

-

Recently Sold

TS922IDT

TS922IDT

STMicroelectronics

IC OPAMP GP 2 CIRCUIT 8SO

M24512-RMC6TG

M24512-RMC6TG

STMicroelectronics

IC EEPROM 512K I2C 1MHZ 8UFDFPN

TAJB106K016RNJ

TAJB106K016RNJ

CAP TANT 10UF 10% 16V 1411

MC74HC373ADWR2G

MC74HC373ADWR2G

ON Semiconductor

IC LATCH OCTAL 3ST TRANS 20SOIC

LTM8073IY#PBF

LTM8073IY#PBF

Linear Technology/Analog Devices

DC DC CONVERTER 0.8-15V

MPQ7053

MPQ7053

Central Semiconductor Corp

TRANS 2NPN/2PNP 250V 0.5A

MAX3208EAUB+T

MAX3208EAUB+T

Maxim Integrated

TVS DIODE 10UMAX

STM6601CM2DDM6F

STM6601CM2DDM6F

STMicroelectronics

IC SUPERVISOR 3.1V 12TDFN

ST1S40IPUR

ST1S40IPUR

STMicroelectronics

IC REG BUCK ADJ 3A 8VFQFPN

PC817XNNIP0F

PC817XNNIP0F

SHARP/Socle Technology

OPTOISOLATOR 5KV TRANS 4SMD

VLS252012HBX-2R2M-1

VLS252012HBX-2R2M-1

TDK

FIXED IND 2.2UH 2.3A 102 MOHM

SCMT22F505PRBA0

SCMT22F505PRBA0

CAPACITOR 5F 20% 5.5V THRU HOLE