SI4916DY-T1-GE3
For Reference Only
| Part Number | SI4916DY-T1-GE3 |
| PNEDA Part # | SI4916DY-T1-GE3 |
| Description | MOSFET 2N-CH 30V 10A 8-SOIC |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 5,922 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 26 - Jul 1 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
SI4916DY-T1-GE3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
|
| Mfr. Part Number | SI4916DY-T1-GE3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SI4916DY-T1-GE3 Datasheet
- where to find SI4916DY-T1-GE3
- Vishay Siliconix
- Vishay Siliconix SI4916DY-T1-GE3
- SI4916DY-T1-GE3 PDF Datasheet
- SI4916DY-T1-GE3 Stock
- SI4916DY-T1-GE3 Pinout
- Datasheet SI4916DY-T1-GE3
- SI4916DY-T1-GE3 Supplier
- Vishay Siliconix Distributor
- SI4916DY-T1-GE3 Price
- SI4916DY-T1-GE3 Distributor
SI4916DY-T1-GE3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | LITTLE FOOT® |
| FET Type | 2 N-Channel (Half Bridge) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 10A, 10.5A |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 3.3W, 3.5W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
The Products You May Be Interested In
|
Manufacturer Toshiba Semiconductor and Storage Series - FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 100mA (Ta) Rds On (Max) @ Id, Vgs 4Ohm @ 10mA, 4V Vgs(th) (Max) @ Id 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 8.5pF @ 3V Power - Max 200mW (Ta) Operating Temperature 150°C Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package US6 |
Manufacturer Vishay Semiconductor Diodes Division Series HEXFET® FET Type 4 N-Channel (H-Bridge) FET Feature Standard Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 31A Rds On (Max) @ Id, Vgs 220mOhm @ 19A, 10V Vgs(th) (Max) @ Id 6V @ 250µA Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 7210pF @ 25V Power - Max 1140W Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case 16-MTP Module Supplier Device Package 16-MTP |
Manufacturer Toshiba Semiconductor and Storage Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 200mA Rds On (Max) @ Id, Vgs 2.1Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 3.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 17pF @ 25V Power - Max 150mW Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-563, SOT-666 Supplier Device Package ES6 (1.6x1.6) |
Manufacturer ON Semiconductor Series - FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 540mA, 430mA Rds On (Max) @ Id, Vgs 550mOhm @ 540mA, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 150pF @ 16V Power - Max 250mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-563, SOT-666 Supplier Device Package SOT-563 |
Manufacturer Advanced Linear Devices Inc. Series EPAD®, Zero Threshold™ FET Type 2 N-Channel (Dual) Matched Pair FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 10.6V Current - Continuous Drain (Id) @ 25°C 80mA Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds - Power - Max 500mW Operating Temperature 0°C ~ 70°C (TJ) Mounting Type Through Hole Package / Case 8-DIP (0.300", 7.62mm) Supplier Device Package 8-PDIP |
