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SI4931DY-T1-GE3

SI4931DY-T1-GE3

For Reference Only

Part Number SI4931DY-T1-GE3
PNEDA Part # SI4931DY-T1-GE3
Description MOSFET 2P-CH 12V 6.7A 8SOIC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 143,496
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI4931DY-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI4931DY-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI4931DY-T1-GE3, SI4931DY-T1-GE3 Datasheet (Total Pages: 8, Size: 604.36 KB)
PDFSI4931DY-T1-GE3 Datasheet Cover
SI4931DY-T1-GE3 Datasheet Page 2 SI4931DY-T1-GE3 Datasheet Page 3 SI4931DY-T1-GE3 Datasheet Page 4 SI4931DY-T1-GE3 Datasheet Page 5 SI4931DY-T1-GE3 Datasheet Page 6 SI4931DY-T1-GE3 Datasheet Page 7 SI4931DY-T1-GE3 Datasheet Page 8

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SI4931DY-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C6.7A
Rds On (Max) @ Id, Vgs18mOhm @ 8.9A, 4.5V
Vgs(th) (Max) @ Id1V @ 350µA
Gate Charge (Qg) (Max) @ Vgs52nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max1.1W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

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