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SI4967DY-T1-GE3

SI4967DY-T1-GE3

For Reference Only

Part Number SI4967DY-T1-GE3
PNEDA Part # SI4967DY-T1-GE3
Description MOSFET 2P-CH 12V 8SOIC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 8,838
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI4967DY-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI4967DY-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI4967DY-T1-GE3, SI4967DY-T1-GE3 Datasheet (Total Pages: 5, Size: 99.2 KB)
PDFSI4967DY-T1-GE3 Datasheet Cover
SI4967DY-T1-GE3 Datasheet Page 2 SI4967DY-T1-GE3 Datasheet Page 3 SI4967DY-T1-GE3 Datasheet Page 4 SI4967DY-T1-GE3 Datasheet Page 5

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SI4967DY-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C-
Rds On (Max) @ Id, Vgs23mOhm @ 7.5A, 4.5V
Vgs(th) (Max) @ Id450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs55nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max2W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

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