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SI5459DU-T1-GE3

SI5459DU-T1-GE3

For Reference Only

Part Number SI5459DU-T1-GE3
PNEDA Part # SI5459DU-T1-GE3
Description MOSFET P-CH 20V 8A CHIPFET
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 26,586
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 16 - May 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI5459DU-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI5459DU-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI5459DU-T1-GE3, SI5459DU-T1-GE3 Datasheet (Total Pages: 9, Size: 186.02 KB)
PDFSI5459DU-T1-GE3 Datasheet Cover
SI5459DU-T1-GE3 Datasheet Page 2 SI5459DU-T1-GE3 Datasheet Page 3 SI5459DU-T1-GE3 Datasheet Page 4 SI5459DU-T1-GE3 Datasheet Page 5 SI5459DU-T1-GE3 Datasheet Page 6 SI5459DU-T1-GE3 Datasheet Page 7 SI5459DU-T1-GE3 Datasheet Page 8 SI5459DU-T1-GE3 Datasheet Page 9

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SI5459DU-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs52mOhm @ 6.7A, 4.5V
Vgs(th) (Max) @ Id1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs26nC @ 10V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds665pF @ 10V
FET Feature-
Power Dissipation (Max)3.5W (Ta), 10.9W (Tc)
Operating Temperature-50°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® ChipFet Single
Package / CasePowerPAK® ChipFET™ Single

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