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SI5475BDC-T1-E3

SI5475BDC-T1-E3

For Reference Only

Part Number SI5475BDC-T1-E3
PNEDA Part # SI5475BDC-T1-E3
Description MOSFET P-CH 12V 6A 1206-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,392
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 16 - Jun 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI5475BDC-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI5475BDC-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI5475BDC-T1-E3, SI5475BDC-T1-E3 Datasheet (Total Pages: 7, Size: 120.11 KB)
PDFSI5475BDC-T1-GE3 Datasheet Cover
SI5475BDC-T1-GE3 Datasheet Page 2 SI5475BDC-T1-GE3 Datasheet Page 3 SI5475BDC-T1-GE3 Datasheet Page 4 SI5475BDC-T1-GE3 Datasheet Page 5 SI5475BDC-T1-GE3 Datasheet Page 6 SI5475BDC-T1-GE3 Datasheet Page 7

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SI5475BDC-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs28mOhm @ 5.6A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs40nC @ 8V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds1400pF @ 6V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 6.3W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package1206-8 ChipFET™
Package / Case8-SMD, Flat Lead

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