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SI5480DU-T1-E3

SI5480DU-T1-E3

For Reference Only

Part Number SI5480DU-T1-E3
PNEDA Part # SI5480DU-T1-E3
Description MOSFET N-CH 30V 12A PPAK CHIPFET
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,022
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 16 - May 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI5480DU-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI5480DU-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI5480DU-T1-E3, SI5480DU-T1-E3 Datasheet (Total Pages: 7, Size: 117.81 KB)
PDFSI5480DU-T1-GE3 Datasheet Cover
SI5480DU-T1-GE3 Datasheet Page 2 SI5480DU-T1-GE3 Datasheet Page 3 SI5480DU-T1-GE3 Datasheet Page 4 SI5480DU-T1-GE3 Datasheet Page 5 SI5480DU-T1-GE3 Datasheet Page 6 SI5480DU-T1-GE3 Datasheet Page 7

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SI5480DU-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs16mOhm @ 7.2A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs34nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1230pF @ 15V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 31W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® ChipFet Single
Package / CasePowerPAK® ChipFET™ Single

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