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SI5858DU-T1-GE3

SI5858DU-T1-GE3

For Reference Only

Part Number SI5858DU-T1-GE3
PNEDA Part # SI5858DU-T1-GE3
Description MOSFET N-CH 20V 6A PPAK CHIPFET
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,472
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI5858DU-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI5858DU-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI5858DU-T1-GE3, SI5858DU-T1-GE3 Datasheet (Total Pages: 10, Size: 114.58 KB)
PDFSI5858DU-T1-GE3 Datasheet Cover
SI5858DU-T1-GE3 Datasheet Page 2 SI5858DU-T1-GE3 Datasheet Page 3 SI5858DU-T1-GE3 Datasheet Page 4 SI5858DU-T1-GE3 Datasheet Page 5 SI5858DU-T1-GE3 Datasheet Page 6 SI5858DU-T1-GE3 Datasheet Page 7 SI5858DU-T1-GE3 Datasheet Page 8 SI5858DU-T1-GE3 Datasheet Page 9 SI5858DU-T1-GE3 Datasheet Page 10

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SI5858DU-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesLITTLE FOOT®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs39mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs16nC @ 8V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds520pF @ 10V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)2.3W (Ta), 8.3W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® ChipFet Dual
Package / CasePowerPAK® ChipFET™ Dual

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