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SI5904DC-T1-GE3

SI5904DC-T1-GE3

For Reference Only

Part Number SI5904DC-T1-GE3
PNEDA Part # SI5904DC-T1-GE3
Description MOSFET 2N-CH 20V 3.1A 1206-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,274
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI5904DC-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI5904DC-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI5904DC-T1-GE3, SI5904DC-T1-GE3 Datasheet (Total Pages: 5, Size: 107.2 KB)
PDFSI5904DC-T1-GE3 Datasheet Cover
SI5904DC-T1-GE3 Datasheet Page 2 SI5904DC-T1-GE3 Datasheet Page 3 SI5904DC-T1-GE3 Datasheet Page 4 SI5904DC-T1-GE3 Datasheet Page 5

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SI5904DC-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3.1A
Rds On (Max) @ Id, Vgs75mOhm @ 3.1A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max1.1W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SMD, Flat Lead
Supplier Device Package1206-8 ChipFET™

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Current - Continuous Drain (Id) @ 25°C

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Drain to Source Voltage (Vdss)

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Current - Continuous Drain (Id) @ 25°C

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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Power - Max

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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Power - Max

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Current - Continuous Drain (Id) @ 25°C

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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Power - Max

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Current - Continuous Drain (Id) @ 25°C

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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