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SI5913DC-T1-E3

SI5913DC-T1-E3

For Reference Only

Part Number SI5913DC-T1-E3
PNEDA Part # SI5913DC-T1-E3
Description MOSFET P-CH 20V 4A 1206-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 2,970
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 16 - Jun 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI5913DC-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI5913DC-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI5913DC-T1-E3, SI5913DC-T1-E3 Datasheet (Total Pages: 12, Size: 198.24 KB)
PDFSI5913DC-T1-E3 Datasheet Cover
SI5913DC-T1-E3 Datasheet Page 2 SI5913DC-T1-E3 Datasheet Page 3 SI5913DC-T1-E3 Datasheet Page 4 SI5913DC-T1-E3 Datasheet Page 5 SI5913DC-T1-E3 Datasheet Page 6 SI5913DC-T1-E3 Datasheet Page 7 SI5913DC-T1-E3 Datasheet Page 8 SI5913DC-T1-E3 Datasheet Page 9 SI5913DC-T1-E3 Datasheet Page 10 SI5913DC-T1-E3 Datasheet Page 11

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SI5913DC-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesLITTLE FOOT®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Rds On (Max) @ Id, Vgs84mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds330pF @ 10V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)1.7W (Ta), 3.1W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package1206-8 ChipFET™
Package / Case8-SMD, Flat Lead

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