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SI5915DC-T1-E3

SI5915DC-T1-E3

For Reference Only

Part Number SI5915DC-T1-E3
PNEDA Part # SI5915DC-T1-E3
Description MOSFET 2P-CH 8V 3.4A 1206-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,112
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI5915DC-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI5915DC-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI5915DC-T1-E3, SI5915DC-T1-E3 Datasheet (Total Pages: 5, Size: 108.87 KB)
PDFSI5915DC-T1-GE3 Datasheet Cover
SI5915DC-T1-GE3 Datasheet Page 2 SI5915DC-T1-GE3 Datasheet Page 3 SI5915DC-T1-GE3 Datasheet Page 4 SI5915DC-T1-GE3 Datasheet Page 5

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SI5915DC-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)8V
Current - Continuous Drain (Id) @ 25°C3.4A
Rds On (Max) @ Id, Vgs70mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max1.1W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SMD, Flat Lead
Supplier Device Package1206-8 ChipFET™

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