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SI5920DC-T1-GE3

SI5920DC-T1-GE3

For Reference Only

Part Number SI5920DC-T1-GE3
PNEDA Part # SI5920DC-T1-GE3
Description MOSFET 2N-CH 8V 4A 1206-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,302
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI5920DC-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI5920DC-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI5920DC-T1-GE3, SI5920DC-T1-GE3 Datasheet (Total Pages: 7, Size: 107.93 KB)
PDFSI5920DC-T1-GE3 Datasheet Cover
SI5920DC-T1-GE3 Datasheet Page 2 SI5920DC-T1-GE3 Datasheet Page 3 SI5920DC-T1-GE3 Datasheet Page 4 SI5920DC-T1-GE3 Datasheet Page 5 SI5920DC-T1-GE3 Datasheet Page 6 SI5920DC-T1-GE3 Datasheet Page 7

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SI5920DC-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)8V
Current - Continuous Drain (Id) @ 25°C4A
Rds On (Max) @ Id, Vgs32mOhm @ 6.8A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds680pF @ 4V
Power - Max3.12W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SMD, Flat Lead
Supplier Device Package1206-8 ChipFET™

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