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SI5980DU-T1-GE3

SI5980DU-T1-GE3

For Reference Only

Part Number SI5980DU-T1-GE3
PNEDA Part # SI5980DU-T1-GE3
Description MOSFET 2N-CH 100V 2.5A CHIPFET
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,112
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI5980DU-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI5980DU-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI5980DU-T1-GE3, SI5980DU-T1-GE3 Datasheet (Total Pages: 7, Size: 112.57 KB)
PDFSI5980DU-T1-GE3 Datasheet Cover
SI5980DU-T1-GE3 Datasheet Page 2 SI5980DU-T1-GE3 Datasheet Page 3 SI5980DU-T1-GE3 Datasheet Page 4 SI5980DU-T1-GE3 Datasheet Page 5 SI5980DU-T1-GE3 Datasheet Page 6 SI5980DU-T1-GE3 Datasheet Page 7

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SI5980DU-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C2.5A
Rds On (Max) @ Id, Vgs567mOhm @ 400mA, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs3.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds78pF @ 50V
Power - Max7.8W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® ChipFET™ Dual
Supplier Device PackagePowerPAK® ChipFet Dual

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