Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI6433BDQ-T1-E3

SI6433BDQ-T1-E3

For Reference Only

Part Number SI6433BDQ-T1-E3
PNEDA Part # SI6433BDQ-T1-E3
Description MOSFET P-CH 12V 4A 8-TSSOP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,194
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 18 - May 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI6433BDQ-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI6433BDQ-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI6433BDQ-T1-E3, SI6433BDQ-T1-E3 Datasheet (Total Pages: 6, Size: 89.75 KB)
PDFSI6433BDQ-T1-GE3 Datasheet Cover
SI6433BDQ-T1-GE3 Datasheet Page 2 SI6433BDQ-T1-GE3 Datasheet Page 3 SI6433BDQ-T1-GE3 Datasheet Page 4 SI6433BDQ-T1-GE3 Datasheet Page 5 SI6433BDQ-T1-GE3 Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SI6433BDQ-T1-E3 Datasheet
  • where to find SI6433BDQ-T1-E3
  • Vishay Siliconix

  • Vishay Siliconix SI6433BDQ-T1-E3
  • SI6433BDQ-T1-E3 PDF Datasheet
  • SI6433BDQ-T1-E3 Stock

  • SI6433BDQ-T1-E3 Pinout
  • Datasheet SI6433BDQ-T1-E3
  • SI6433BDQ-T1-E3 Supplier

  • Vishay Siliconix Distributor
  • SI6433BDQ-T1-E3 Price
  • SI6433BDQ-T1-E3 Distributor

SI6433BDQ-T1-E3 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs40mOhm @ 4.8A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)1.05W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-TSSOP
Package / Case8-TSSOP (0.173", 4.40mm Width)

The Products You May Be Interested In

FDMS3500

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

9.2A (Ta), 49A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

14.5mOhm @ 11.5A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

91nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4765pF @ 40V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 96W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Power Clip 56

Package / Case

8-PowerTDFN

FDD5614P

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

15A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

100mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

24nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

759pF @ 30V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 42W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IRLR9343TRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

105mOhm @ 3.4A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

47nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

660pF @ 50V

FET Feature

-

Power Dissipation (Max)

79W (Tc)

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-PAK (TO-252AA)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

NTMFS4847NT3G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

11.5A (Ta), 85A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 11.5V

Rds On (Max) @ Id, Vgs

4.1mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

28nC @ 4.5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

2614pF @ 12V

FET Feature

-

Power Dissipation (Max)

880mW (Ta), 48.4W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN, 5 Leads

TSM80N1R2CL C0G

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

5.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.2Ohm @ 1.8A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

19.4nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

685pF @ 100V

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262S (I2PAK)

Package / Case

TO-262-3 Short Leads, I²Pak

Recently Sold

SML-310MTT86

SML-310MTT86

Rohm Semiconductor

LED GREEN CLEAR 0603 SMD

PS2805-1-A

PS2805-1-A

CEL

OPTOISOLATOR 2.5KV TRANS 4SOIC

ALDP112W

ALDP112W

Panasonic Electric Works

RELAY GEN PURPOSE SPST 5A 12V

0001.2536

0001.2536

Schurter

FUSE CER 16A 250VAC 63VDC 3AB

WSL1206R0500FEA

WSL1206R0500FEA

Vishay Dale

RES 0.05 OHM 1% 1/4W 1206

B360B-13-F

B360B-13-F

Diodes Incorporated

DIODE SCHOTTKY 60V 3A SMB

CY2305SXI-1HT

CY2305SXI-1HT

Cypress Semiconductor

IC CLK ZDB 5OUT 133MHZ 8SOIC

USB3320C-EZK-TR

USB3320C-EZK-TR

Microchip Technology

IC TRANSCEIVER HALF 1/1 32QFN

IHLP2525CZERR22M01

IHLP2525CZERR22M01

Vishay Dale

FIXED IND 220NH 23A 2.8 MOHM SMD

ATXMEGA64A3U-AU

ATXMEGA64A3U-AU

Microchip Technology

IC MCU 8/16BIT 64KB FLASH 64TQFP

MAX3076EESD+

MAX3076EESD+

Maxim Integrated

IC TRANSCEIVER FULL 1/1 14SOIC

HCPL-3700-500E

HCPL-3700-500E

Broadcom

OPTOISOLATOR 3.75KV DARL 8DIP GW