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SI6463BDQ-T1-GE3

SI6463BDQ-T1-GE3

For Reference Only

Part Number SI6463BDQ-T1-GE3
PNEDA Part # SI6463BDQ-T1-GE3
Description MOSFET P-CH 20V 6.2A 8-TSSOP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,338
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI6463BDQ-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI6463BDQ-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI6463BDQ-T1-GE3, SI6463BDQ-T1-GE3 Datasheet (Total Pages: 6, Size: 98.9 KB)
PDFSI6463BDQ-T1-GE3 Datasheet Cover
SI6463BDQ-T1-GE3 Datasheet Page 2 SI6463BDQ-T1-GE3 Datasheet Page 3 SI6463BDQ-T1-GE3 Datasheet Page 4 SI6463BDQ-T1-GE3 Datasheet Page 5 SI6463BDQ-T1-GE3 Datasheet Page 6

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SI6463BDQ-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs15mOhm @ 7.4A, 4.5V
Vgs(th) (Max) @ Id800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs60nC @ 5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)1.05W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-TSSOP
Package / Case8-TSSOP (0.173", 4.40mm Width)

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