SI6963BDQ-T1-GE3
For Reference Only
| Part Number | SI6963BDQ-T1-GE3 |
| PNEDA Part # | SI6963BDQ-T1-GE3 |
| Description | MOSFET 2P-CH 20V 3.4A 8-TSSOP |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 3,870 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 24 - May 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
SI6963BDQ-T1-GE3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
|
| Mfr. Part Number | SI6963BDQ-T1-GE3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SI6963BDQ-T1-GE3 Datasheet
- where to find SI6963BDQ-T1-GE3
- Vishay Siliconix
- Vishay Siliconix SI6963BDQ-T1-GE3
- SI6963BDQ-T1-GE3 PDF Datasheet
- SI6963BDQ-T1-GE3 Stock
- SI6963BDQ-T1-GE3 Pinout
- Datasheet SI6963BDQ-T1-GE3
- SI6963BDQ-T1-GE3 Supplier
- Vishay Siliconix Distributor
- SI6963BDQ-T1-GE3 Price
- SI6963BDQ-T1-GE3 Distributor
SI6963BDQ-T1-GE3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | - |
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3.4A |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 3.9A, 4.5V |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 830mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-TSSOP (0.173", 4.40mm Width) |
| Supplier Device Package | 8-TSSOP |
The Products You May Be Interested In
|
Manufacturer Microsemi Corporation Series - FET Type 2 N-Channel (Half Bridge) FET Feature Silicon Carbide (SiC) Drain to Source Voltage (Vdss) 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C 250A (Tc) Rds On (Max) @ Id, Vgs 10mOhm @ 200A, 20V Vgs(th) (Max) @ Id 2.2V @ 10mA (Typ) Gate Charge (Qg) (Max) @ Vgs 490nC @ 20V Input Capacitance (Ciss) (Max) @ Vds 9500pF @ 1000V Power - Max 1100W Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case D-3 Module Supplier Device Package D3 |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 7.1A Rds On (Max) @ Id, Vgs 17mOhm @ 11.1A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1.4W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® SO-8 Dual Supplier Device Package PowerPAK® SO-8 Dual |
Manufacturer Microchip Technology Series - FET Type 2 N and 2 P-Channel FET Feature Standard Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs 6Ohm @ 1A, 10V Vgs(th) (Max) @ Id 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 56pF @ 25V Power - Max - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 12-VFDFN Exposed Pad Supplier Device Package 12-DFN (4x4) |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 8V Current - Continuous Drain (Id) @ 25°C 630mA Rds On (Max) @ Id, Vgs 542mOhm @ 580mA, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 62pF @ 4V Power - Max 357mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package SC-70-6 (SOT-363) |
Manufacturer EPC Series eGaN® FET Type 2 N-Channel (Half Bridge) FET Feature GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 1.7A Rds On (Max) @ Id, Vgs 70mOhm @ 2A, 5V Vgs(th) (Max) @ Id 2.5V @ 600µA Gate Charge (Qg) (Max) @ Vgs 0.73nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 75pF @ 50V Power - Max - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case Die Supplier Device Package Die |
