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SI6967DQ-T1-E3

SI6967DQ-T1-E3

For Reference Only

Part Number SI6967DQ-T1-E3
PNEDA Part # SI6967DQ-T1-E3
Description MOSFET 2P-CH 8V 8TSSOP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,690
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI6967DQ-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI6967DQ-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI6967DQ-T1-E3, SI6967DQ-T1-E3 Datasheet (Total Pages: 5, Size: 96.8 KB)
PDFSI6967DQ-T1-GE3 Datasheet Cover
SI6967DQ-T1-GE3 Datasheet Page 2 SI6967DQ-T1-GE3 Datasheet Page 3 SI6967DQ-T1-GE3 Datasheet Page 4 SI6967DQ-T1-GE3 Datasheet Page 5

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SI6967DQ-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)8V
Current - Continuous Drain (Id) @ 25°C-
Rds On (Max) @ Id, Vgs30mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs40nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max1.1W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package8-TSSOP

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Input Capacitance (Ciss) (Max) @ Vds

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Current - Continuous Drain (Id) @ 25°C

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