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SI6969BDQ-T1-GE3

SI6969BDQ-T1-GE3

For Reference Only

Part Number SI6969BDQ-T1-GE3
PNEDA Part # SI6969BDQ-T1-GE3
Description MOSFET 2P-CH 12V 4A 8TSSOP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 6,102
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI6969BDQ-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI6969BDQ-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI6969BDQ-T1-GE3, SI6969BDQ-T1-GE3 Datasheet (Total Pages: 6, Size: 103.05 KB)
PDFSI6969BDQ-T1-GE3 Datasheet Cover
SI6969BDQ-T1-GE3 Datasheet Page 2 SI6969BDQ-T1-GE3 Datasheet Page 3 SI6969BDQ-T1-GE3 Datasheet Page 4 SI6969BDQ-T1-GE3 Datasheet Page 5 SI6969BDQ-T1-GE3 Datasheet Page 6

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SI6969BDQ-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C4A
Rds On (Max) @ Id, Vgs30mOhm @ 4.6A, 4.5V
Vgs(th) (Max) @ Id800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs25nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max830mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package8-TSSOP

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