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SI7104DN-T1-E3

SI7104DN-T1-E3

For Reference Only

Part Number SI7104DN-T1-E3
PNEDA Part # SI7104DN-T1-E3
Description MOSFET N-CH 12V 35A PPAK 1212-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,564
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 23 - May 28 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI7104DN-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI7104DN-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI7104DN-T1-E3, SI7104DN-T1-E3 Datasheet (Total Pages: 14, Size: 537.6 KB)
PDFSI7104DN-T1-GE3 Datasheet Cover
SI7104DN-T1-GE3 Datasheet Page 2 SI7104DN-T1-GE3 Datasheet Page 3 SI7104DN-T1-GE3 Datasheet Page 4 SI7104DN-T1-GE3 Datasheet Page 5 SI7104DN-T1-GE3 Datasheet Page 6 SI7104DN-T1-GE3 Datasheet Page 7 SI7104DN-T1-GE3 Datasheet Page 8 SI7104DN-T1-GE3 Datasheet Page 9 SI7104DN-T1-GE3 Datasheet Page 10 SI7104DN-T1-GE3 Datasheet Page 11

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SI7104DN-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs3.7mOhm @ 26.1A, 4.5V
Vgs(th) (Max) @ Id1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs70nC @ 10V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds2800pF @ 6V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 52W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

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