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SI7111EDN-T1-GE3

SI7111EDN-T1-GE3

For Reference Only

Part Number SI7111EDN-T1-GE3
PNEDA Part # SI7111EDN-T1-GE3
Description MOSFET P-CH 30V 60A POWERPAK1212
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 8,892
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI7111EDN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI7111EDN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI7111EDN-T1-GE3, SI7111EDN-T1-GE3 Datasheet (Total Pages: 7, Size: 143.34 KB)
PDFSI7111EDN-T1-GE3 Datasheet Cover
SI7111EDN-T1-GE3 Datasheet Page 2 SI7111EDN-T1-GE3 Datasheet Page 3 SI7111EDN-T1-GE3 Datasheet Page 4 SI7111EDN-T1-GE3 Datasheet Page 5 SI7111EDN-T1-GE3 Datasheet Page 6 SI7111EDN-T1-GE3 Datasheet Page 7

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SI7111EDN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET® Gen III
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs8.55mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs46nC @ 2.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds5860pF @ 15V
FET Feature-
Power Dissipation (Max)52W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

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