Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI7114DN-T1-E3

SI7114DN-T1-E3 SI7114DN-T1-E3

For Reference Only

Part Number SI7114DN-T1-E3
PNEDA Part # SI7114DN-T1-E3
Description MOSFET N-CH 30V 11.7A 1212-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 27,162
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 21 - Mar 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI7114DN-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI7114DN-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI7114DN-T1-E3, SI7114DN-T1-E3 Datasheet (Total Pages: 12, Size: 529.48 KB)
PDFSI7114DN-T1-GE3 Datasheet Cover
SI7114DN-T1-GE3 Datasheet Page 2 SI7114DN-T1-GE3 Datasheet Page 3 SI7114DN-T1-GE3 Datasheet Page 4 SI7114DN-T1-GE3 Datasheet Page 5 SI7114DN-T1-GE3 Datasheet Page 6 SI7114DN-T1-GE3 Datasheet Page 7 SI7114DN-T1-GE3 Datasheet Page 8 SI7114DN-T1-GE3 Datasheet Page 9 SI7114DN-T1-GE3 Datasheet Page 10 SI7114DN-T1-GE3 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SI7114DN-T1-E3 Datasheet
  • where to find SI7114DN-T1-E3
  • Vishay Siliconix

  • Vishay Siliconix SI7114DN-T1-E3
  • SI7114DN-T1-E3 PDF Datasheet
  • SI7114DN-T1-E3 Stock

  • SI7114DN-T1-E3 Pinout
  • Datasheet SI7114DN-T1-E3
  • SI7114DN-T1-E3 Supplier

  • Vishay Siliconix Distributor
  • SI7114DN-T1-E3 Price
  • SI7114DN-T1-E3 Distributor

SI7114DN-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C11.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs7.5mOhm @ 18.3A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs19nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)1.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

The Products You May Be Interested In

BUK7275-100A,118

Nexperia

Manufacturer

Nexperia USA Inc.

Series

Automotive, AEC-Q101, TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

21.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

75mOhm @ 13A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1210pF @ 25V

FET Feature

-

Power Dissipation (Max)

89W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

APT29F80J

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS 8™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

31A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

210mOhm @ 24A, 10V

Vgs(th) (Max) @ Id

5V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

303nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

9326pF @ 25V

FET Feature

-

Power Dissipation (Max)

543W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

ISOTOP®

Package / Case

SOT-227-4, miniBLOC

STW8NB100

STMicroelectronics

Manufacturer

STMicroelectronics

Series

PowerMESH™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

7.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.45Ohm @ 3.6A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

95nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2900pF @ 25V

FET Feature

-

Power Dissipation (Max)

190W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

ZXM66N03N8TA

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

15mOhm @ 7.3A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

2.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

TSM1N45DCS RLG

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

450V

Current - Continuous Drain (Id) @ 25°C

500mA (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.25Ohm @ 250mA, 10V

Vgs(th) (Max) @ Id

4.9V @ 250mA

Gate Charge (Qg) (Max) @ Vgs

6.5nC @ 10V

Vgs (Max)

±50V

Input Capacitance (Ciss) (Max) @ Vds

185pF @ 25V

FET Feature

-

Power Dissipation (Max)

900mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOP

Package / Case

8-SOIC (0.154", 3.90mm Width)

Recently Sold

M29W800DT70N6E

M29W800DT70N6E

Micron Technology Inc.

IC FLASH 8M PARALLEL 48TSOP

M24256-BRMN6TP

M24256-BRMN6TP

STMicroelectronics

IC EEPROM 256K I2C 1MHZ 8SO

LTM8025IV#PBF

LTM8025IV#PBF

Linear Technology/Analog Devices

DC DC CONVERTER 0.8-24V 3A

EN6347QI

EN6347QI

Intel

DC DC CONVERTER 0.6-6.24V

MM74C923WM

MM74C923WM

ON Semiconductor

IC ENCODER 20-KEY 20-SOIC

FMG2G400US60

FMG2G400US60

ON Semiconductor

IGBT MOLDING 600V 400A 7PM-IA

VS-30BQ060TRPBF

VS-30BQ060TRPBF

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 3A SMC

HCPL-5631

HCPL-5631

Broadcom

OPTOISO 1.5KV 2CH OPEN COLL 8DIP

LTC2495IUHF#PBF

LTC2495IUHF#PBF

Linear Technology/Analog Devices

IC ADC 16BIT SIGMA-DELTA 38QFN

ADXRS450BEYZ

ADXRS450BEYZ

Analog Devices

SENS GYRO 300DEG/S DGTL 14CLCC

ARF445

ARF445

Microsemi

PWR MOSFET RF N-CH 900V TO-247AD

DECB33J681KC4B

DECB33J681KC4B

Murata

CAP CER 680PF 6.3KV RADIAL