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SI7114DN-T1-E3

SI7114DN-T1-E3 SI7114DN-T1-E3

For Reference Only

Part Number SI7114DN-T1-E3
PNEDA Part # SI7114DN-T1-E3
Description MOSFET N-CH 30V 11.7A 1212-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 27,162
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 23 - May 28 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI7114DN-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI7114DN-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI7114DN-T1-E3, SI7114DN-T1-E3 Datasheet (Total Pages: 12, Size: 529.48 KB)
PDFSI7114DN-T1-GE3 Datasheet Cover
SI7114DN-T1-GE3 Datasheet Page 2 SI7114DN-T1-GE3 Datasheet Page 3 SI7114DN-T1-GE3 Datasheet Page 4 SI7114DN-T1-GE3 Datasheet Page 5 SI7114DN-T1-GE3 Datasheet Page 6 SI7114DN-T1-GE3 Datasheet Page 7 SI7114DN-T1-GE3 Datasheet Page 8 SI7114DN-T1-GE3 Datasheet Page 9 SI7114DN-T1-GE3 Datasheet Page 10 SI7114DN-T1-GE3 Datasheet Page 11

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SI7114DN-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C11.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs7.5mOhm @ 18.3A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs19nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)1.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

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