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SI7172DP-T1-GE3

SI7172DP-T1-GE3

For Reference Only

Part Number SI7172DP-T1-GE3
PNEDA Part # SI7172DP-T1-GE3
Description MOSFET N-CH 200V 25A PPAK SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 165,051
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 15 - Jun 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI7172DP-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI7172DP-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI7172DP-T1-GE3, SI7172DP-T1-GE3 Datasheet (Total Pages: 13, Size: 362.21 KB)
PDFSI7172DP-T1-GE3 Datasheet Cover
SI7172DP-T1-GE3 Datasheet Page 2 SI7172DP-T1-GE3 Datasheet Page 3 SI7172DP-T1-GE3 Datasheet Page 4 SI7172DP-T1-GE3 Datasheet Page 5 SI7172DP-T1-GE3 Datasheet Page 6 SI7172DP-T1-GE3 Datasheet Page 7 SI7172DP-T1-GE3 Datasheet Page 8 SI7172DP-T1-GE3 Datasheet Page 9 SI7172DP-T1-GE3 Datasheet Page 10 SI7172DP-T1-GE3 Datasheet Page 11

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SI7172DP-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs70mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs77nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2250pF @ 100V
FET Feature-
Power Dissipation (Max)5.4W (Ta), 96W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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