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SI7190ADP-T1-RE3

SI7190ADP-T1-RE3

For Reference Only

Part Number SI7190ADP-T1-RE3
PNEDA Part # SI7190ADP-T1-RE3
Description MOSFET N-CHAN 250V POWERPAK SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 6,066
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 1 - May 6 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI7190ADP-T1-RE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI7190ADP-T1-RE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI7190ADP-T1-RE3, SI7190ADP-T1-RE3 Datasheet (Total Pages: 9, Size: 223.76 KB)
PDFSI7190ADP-T1-RE3 Datasheet Cover
SI7190ADP-T1-RE3 Datasheet Page 2 SI7190ADP-T1-RE3 Datasheet Page 3 SI7190ADP-T1-RE3 Datasheet Page 4 SI7190ADP-T1-RE3 Datasheet Page 5 SI7190ADP-T1-RE3 Datasheet Page 6 SI7190ADP-T1-RE3 Datasheet Page 7 SI7190ADP-T1-RE3 Datasheet Page 8 SI7190ADP-T1-RE3 Datasheet Page 9

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SI7190ADP-T1-RE3 Specifications

ManufacturerVishay Siliconix
SeriesThunderFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25°C4.3A (Ta), 14.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Rds On (Max) @ Id, Vgs102mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs22.4nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds860pF @ 100V
FET Feature-
Power Dissipation (Max)5W (Ta), 56.8W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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