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SI7252DP-T1-GE3

SI7252DP-T1-GE3

For Reference Only

Part Number SI7252DP-T1-GE3
PNEDA Part # SI7252DP-T1-GE3
Description MOSFET 2N-CH 100V 36.7A PPAK 8SO
Manufacturer Vishay Siliconix
Unit Price $31.6656
In Stock 0
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI7252DP-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI7252DP-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI7252DP-T1-GE3, SI7252DP-T1-GE3 Datasheet (Total Pages: 13, Size: 378.12 KB)
PDFSI7252DP-T1-GE3 Datasheet Cover
SI7252DP-T1-GE3 Datasheet Page 2 SI7252DP-T1-GE3 Datasheet Page 3 SI7252DP-T1-GE3 Datasheet Page 4 SI7252DP-T1-GE3 Datasheet Page 5 SI7252DP-T1-GE3 Datasheet Page 6 SI7252DP-T1-GE3 Datasheet Page 7 SI7252DP-T1-GE3 Datasheet Page 8 SI7252DP-T1-GE3 Datasheet Page 9 SI7252DP-T1-GE3 Datasheet Page 10 SI7252DP-T1-GE3 Datasheet Page 11

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SI7252DP-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C36.7A
Rds On (Max) @ Id, Vgs18mOhm @ 15A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1170pF @ 50V
Power - Max46W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual

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