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SI7302DN-T1-E3

SI7302DN-T1-E3

For Reference Only

Part Number SI7302DN-T1-E3
PNEDA Part # SI7302DN-T1-E3
Description MOSFET N-CH 220V 8.4A 1212-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 8,172
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 24 - Jun 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI7302DN-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI7302DN-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI7302DN-T1-E3, SI7302DN-T1-E3 Datasheet (Total Pages: 7, Size: 94.65 KB)
PDFSI7302DN-T1-GE3 Datasheet Cover
SI7302DN-T1-GE3 Datasheet Page 2 SI7302DN-T1-GE3 Datasheet Page 3 SI7302DN-T1-GE3 Datasheet Page 4 SI7302DN-T1-GE3 Datasheet Page 5 SI7302DN-T1-GE3 Datasheet Page 6 SI7302DN-T1-GE3 Datasheet Page 7

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SI7302DN-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)220V
Current - Continuous Drain (Id) @ 25°C8.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs320mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs21nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds645pF @ 15V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 52W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

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