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SI7317DN-T1-GE3

SI7317DN-T1-GE3

For Reference Only

Part Number SI7317DN-T1-GE3
PNEDA Part # SI7317DN-T1-GE3
Description MOSFET P-CH 150V 2.8A 1212-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 26,046
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI7317DN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI7317DN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI7317DN-T1-GE3, SI7317DN-T1-GE3 Datasheet (Total Pages: 13, Size: 640.09 KB)
PDFSI7317DN-T1-GE3 Datasheet Cover
SI7317DN-T1-GE3 Datasheet Page 2 SI7317DN-T1-GE3 Datasheet Page 3 SI7317DN-T1-GE3 Datasheet Page 4 SI7317DN-T1-GE3 Datasheet Page 5 SI7317DN-T1-GE3 Datasheet Page 6 SI7317DN-T1-GE3 Datasheet Page 7 SI7317DN-T1-GE3 Datasheet Page 8 SI7317DN-T1-GE3 Datasheet Page 9 SI7317DN-T1-GE3 Datasheet Page 10 SI7317DN-T1-GE3 Datasheet Page 11

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SI7317DN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs1.2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs9.8nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds365pF @ 75V
FET Feature-
Power Dissipation (Max)3.2W (Ta), 19.8W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

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