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SI7386DP-T1-E3

SI7386DP-T1-E3

For Reference Only

Part Number SI7386DP-T1-E3
PNEDA Part # SI7386DP-T1-E3
Description MOSFET N-CH 30V 12A PPAK SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 48,054
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 19 - May 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI7386DP-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI7386DP-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI7386DP-T1-E3, SI7386DP-T1-E3 Datasheet (Total Pages: 12, Size: 292.36 KB)
PDFSI7386DP-T1-GE3 Datasheet Cover
SI7386DP-T1-GE3 Datasheet Page 2 SI7386DP-T1-GE3 Datasheet Page 3 SI7386DP-T1-GE3 Datasheet Page 4 SI7386DP-T1-GE3 Datasheet Page 5 SI7386DP-T1-GE3 Datasheet Page 6 SI7386DP-T1-GE3 Datasheet Page 7 SI7386DP-T1-GE3 Datasheet Page 8 SI7386DP-T1-GE3 Datasheet Page 9 SI7386DP-T1-GE3 Datasheet Page 10 SI7386DP-T1-GE3 Datasheet Page 11

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SI7386DP-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs7mOhm @ 19A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs18nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)1.8W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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