Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI7386DP-T1-E3

SI7386DP-T1-E3

For Reference Only

Part Number SI7386DP-T1-E3
PNEDA Part # SI7386DP-T1-E3
Description MOSFET N-CH 30V 12A PPAK SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 48,054
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI7386DP-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI7386DP-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI7386DP-T1-E3, SI7386DP-T1-E3 Datasheet (Total Pages: 12, Size: 292.36 KB)
PDFSI7386DP-T1-GE3 Datasheet Cover
SI7386DP-T1-GE3 Datasheet Page 2 SI7386DP-T1-GE3 Datasheet Page 3 SI7386DP-T1-GE3 Datasheet Page 4 SI7386DP-T1-GE3 Datasheet Page 5 SI7386DP-T1-GE3 Datasheet Page 6 SI7386DP-T1-GE3 Datasheet Page 7 SI7386DP-T1-GE3 Datasheet Page 8 SI7386DP-T1-GE3 Datasheet Page 9 SI7386DP-T1-GE3 Datasheet Page 10 SI7386DP-T1-GE3 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SI7386DP-T1-E3 Datasheet
  • where to find SI7386DP-T1-E3
  • Vishay Siliconix

  • Vishay Siliconix SI7386DP-T1-E3
  • SI7386DP-T1-E3 PDF Datasheet
  • SI7386DP-T1-E3 Stock

  • SI7386DP-T1-E3 Pinout
  • Datasheet SI7386DP-T1-E3
  • SI7386DP-T1-E3 Supplier

  • Vishay Siliconix Distributor
  • SI7386DP-T1-E3 Price
  • SI7386DP-T1-E3 Distributor

SI7386DP-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs7mOhm @ 19A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs18nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)1.8W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

The Products You May Be Interested In

SISH110DN-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET® Gen II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

13.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.3mOhm @ 21.1A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

21nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8SH

Package / Case

PowerPAK® 1212-8SH

IRF630NSPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

9.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

300mOhm @ 5.4A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

35nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

575pF @ 25V

FET Feature

-

Power Dissipation (Max)

82W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRFR5410TRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

13A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

205mOhm @ 7.8A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

58nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

760pF @ 25V

FET Feature

-

Power Dissipation (Max)

66W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

FDPF4N60NZ

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UniFET-II™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

3.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.5Ohm @ 1.9A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10.8nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

510pF @ 25V

FET Feature

-

Power Dissipation (Max)

28W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack

DMN6068SE-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

4.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

68mOhm @ 12A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10.3nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

502pF @ 30V

FET Feature

-

Power Dissipation (Max)

2W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-223

Package / Case

TO-261-4, TO-261AA

Recently Sold

AD7689BCBZ-RL7

AD7689BCBZ-RL7

Analog Devices

IC ADC 16BIT SAR 20WLCSP

LT8620EMSE#PBF

LT8620EMSE#PBF

Linear Technology/Analog Devices

IC REG BUCK ADJUSTABLE 2A 16MSOP

ADM1184ARMZ-REEL7

ADM1184ARMZ-REEL7

Analog Devices

IC VOLT MONITOR/SEQ 4CH 10MSOP

ISL6269BCRZ

ISL6269BCRZ

Renesas Electronics America Inc.

IC REG CTRLR BUCK 16QFN

1SMB28AT3G

1SMB28AT3G

Littelfuse

TVS DIODE 28V 45.4V SMB

IHLP4040DZERR56M11

IHLP4040DZERR56M11

Vishay Dale

FIXED IND 560NH 32A 1.8 MOHM SMD

LTC1453CS8#PBF

LTC1453CS8#PBF

Linear Technology/Analog Devices

IC DAC 12BIT V-OUT 8SOIC

MAX3233EEWP+G36

MAX3233EEWP+G36

Maxim Integrated

IC TRANSCEIVER FULL 2/2 20SOIC

MAX31865ATP+

MAX31865ATP+

Maxim Integrated

IC RTD TO DIGITAL CONVERT 20QFN

HEDS-5500#F04

HEDS-5500#F04

Broadcom

ROTARY ENCODER OPTICAL 256PPR

SS34-E3/57T

SS34-E3/57T

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 3A DO214AB

PIC12F629-I/SN

PIC12F629-I/SN

Microchip Technology

IC MCU 8BIT 1.75KB FLASH 8SOIC