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SI7405BDN-T1-GE3

SI7405BDN-T1-GE3

For Reference Only

Part Number SI7405BDN-T1-GE3
PNEDA Part # SI7405BDN-T1-GE3
Description MOSFET P-CH 12V 16A 1212-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 6,354
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI7405BDN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI7405BDN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI7405BDN-T1-GE3, SI7405BDN-T1-GE3 Datasheet (Total Pages: 13, Size: 572.02 KB)
PDFSI7405BDN-T1-E3 Datasheet Cover
SI7405BDN-T1-E3 Datasheet Page 2 SI7405BDN-T1-E3 Datasheet Page 3 SI7405BDN-T1-E3 Datasheet Page 4 SI7405BDN-T1-E3 Datasheet Page 5 SI7405BDN-T1-E3 Datasheet Page 6 SI7405BDN-T1-E3 Datasheet Page 7 SI7405BDN-T1-E3 Datasheet Page 8 SI7405BDN-T1-E3 Datasheet Page 9 SI7405BDN-T1-E3 Datasheet Page 10 SI7405BDN-T1-E3 Datasheet Page 11

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SI7405BDN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs13mOhm @ 13.5A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs115nC @ 8V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds3500pF @ 6V
FET Feature-
Power Dissipation (Max)3.6W (Ta), 33W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

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