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SI7434ADP-T1-RE3

SI7434ADP-T1-RE3

For Reference Only

Part Number SI7434ADP-T1-RE3
PNEDA Part # SI7434ADP-T1-RE3
Description MOSFET N-CHAN 250V POWERPAK SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,974
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 17 - Jun 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI7434ADP-T1-RE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI7434ADP-T1-RE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI7434ADP-T1-RE3, SI7434ADP-T1-RE3 Datasheet (Total Pages: 9, Size: 236.98 KB)
PDFSI7434ADP-T1-RE3 Datasheet Cover
SI7434ADP-T1-RE3 Datasheet Page 2 SI7434ADP-T1-RE3 Datasheet Page 3 SI7434ADP-T1-RE3 Datasheet Page 4 SI7434ADP-T1-RE3 Datasheet Page 5 SI7434ADP-T1-RE3 Datasheet Page 6 SI7434ADP-T1-RE3 Datasheet Page 7 SI7434ADP-T1-RE3 Datasheet Page 8 SI7434ADP-T1-RE3 Datasheet Page 9

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SI7434ADP-T1-RE3 Specifications

ManufacturerVishay Siliconix
SeriesThunderFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25°C3.7A (Ta), 12.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Rds On (Max) @ Id, Vgs150mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs16.5nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds600pF @ 125V
FET Feature-
Power Dissipation (Max)5W (Ta), 54.3W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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