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SI7457DP-T1-GE3

SI7457DP-T1-GE3

For Reference Only

Part Number SI7457DP-T1-GE3
PNEDA Part # SI7457DP-T1-GE3
Description MOSFET P-CH 100V 28A PPAK SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,554
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 5 - Mar 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI7457DP-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI7457DP-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI7457DP-T1-GE3, SI7457DP-T1-GE3 Datasheet (Total Pages: 13, Size: 301.31 KB)
PDFSI7457DP-T1-GE3 Datasheet Cover
SI7457DP-T1-GE3 Datasheet Page 2 SI7457DP-T1-GE3 Datasheet Page 3 SI7457DP-T1-GE3 Datasheet Page 4 SI7457DP-T1-GE3 Datasheet Page 5 SI7457DP-T1-GE3 Datasheet Page 6 SI7457DP-T1-GE3 Datasheet Page 7 SI7457DP-T1-GE3 Datasheet Page 8 SI7457DP-T1-GE3 Datasheet Page 9 SI7457DP-T1-GE3 Datasheet Page 10 SI7457DP-T1-GE3 Datasheet Page 11

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SI7457DP-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs42mOhm @ 7.9A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs160nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5230pF @ 50V
FET Feature-
Power Dissipation (Max)5.2W (Ta), 83.3W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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