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SI7491DP-T1-E3

SI7491DP-T1-E3

For Reference Only

Part Number SI7491DP-T1-E3
PNEDA Part # SI7491DP-T1-E3
Description MOSFET P-CH 30V 11A PPAK SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,194
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 15 - Jun 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI7491DP-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI7491DP-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI7491DP-T1-E3, SI7491DP-T1-E3 Datasheet (Total Pages: 12, Size: 307.25 KB)
PDFSI7491DP-T1-GE3 Datasheet Cover
SI7491DP-T1-GE3 Datasheet Page 2 SI7491DP-T1-GE3 Datasheet Page 3 SI7491DP-T1-GE3 Datasheet Page 4 SI7491DP-T1-GE3 Datasheet Page 5 SI7491DP-T1-GE3 Datasheet Page 6 SI7491DP-T1-GE3 Datasheet Page 7 SI7491DP-T1-GE3 Datasheet Page 8 SI7491DP-T1-GE3 Datasheet Page 9 SI7491DP-T1-GE3 Datasheet Page 10 SI7491DP-T1-GE3 Datasheet Page 11

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SI7491DP-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs85nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)1.8W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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