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SI7601DN-T1-E3

SI7601DN-T1-E3

For Reference Only

Part Number SI7601DN-T1-E3
PNEDA Part # SI7601DN-T1-E3
Description MOSFET P-CH 20V 16A 1212-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,364
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI7601DN-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI7601DN-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI7601DN-T1-E3, SI7601DN-T1-E3 Datasheet (Total Pages: 7, Size: 112.89 KB)
PDFSI7601DN-T1-E3 Datasheet Cover
SI7601DN-T1-E3 Datasheet Page 2 SI7601DN-T1-E3 Datasheet Page 3 SI7601DN-T1-E3 Datasheet Page 4 SI7601DN-T1-E3 Datasheet Page 5 SI7601DN-T1-E3 Datasheet Page 6 SI7601DN-T1-E3 Datasheet Page 7

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SI7601DN-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs19.2mOhm @ 11A, 4.5V
Vgs(th) (Max) @ Id1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs27nC @ 5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds1870pF @ 10V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 52W (Tc)
Operating Temperature-50°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

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