SI7625DN-T1-GE3
For Reference Only
| Part Number | SI7625DN-T1-GE3 |
| PNEDA Part # | SI7625DN-T1-GE3 |
| Description | MOSFET P-CH 30V 35A 1212-8 PPAK |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 33,460 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 1 - May 6 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SI7625DN-T1-GE3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
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| Mfr. Part Number | SI7625DN-T1-GE3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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SI7625DN-T1-GE3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 126nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4427pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 52W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® 1212-8 |
| Package / Case | PowerPAK® 1212-8 |
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Manufacturer Vishay Siliconix Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 7.7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 300mOhm @ 4.6A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 860pF @ 25V FET Feature - Power Dissipation (Max) 42W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 Full Pack, Isolated Tab |
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Manufacturer Microsemi Corporation Series Military, MIL-PRF-19500/630 FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 12V Rds On (Max) @ Id, Vgs 350mOhm @ 6.5A, 12V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 45nC @ 12V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 25W (Tc) Operating Temperature -55°C ~ 150°C Mounting Type Surface Mount Supplier Device Package 18-ULCC (9.14x7.49) Package / Case 18-CLCC |
