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SI7844DP-T1-E3

SI7844DP-T1-E3

For Reference Only

Part Number SI7844DP-T1-E3
PNEDA Part # SI7844DP-T1-E3
Description MOSFET 2N-CH 30V 6.4A PPAK SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 8,406
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 24 - Jun 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI7844DP-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI7844DP-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI7844DP-T1-E3, SI7844DP-T1-E3 Datasheet (Total Pages: 6, Size: 108.67 KB)
PDFSI7844DP-T1-GE3 Datasheet Cover
SI7844DP-T1-GE3 Datasheet Page 2 SI7844DP-T1-GE3 Datasheet Page 3 SI7844DP-T1-GE3 Datasheet Page 4 SI7844DP-T1-GE3 Datasheet Page 5 SI7844DP-T1-GE3 Datasheet Page 6

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SI7844DP-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C6.4A
Rds On (Max) @ Id, Vgs22mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max1.4W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual

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