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SI7848BDP-T1-GE3

SI7848BDP-T1-GE3

For Reference Only

Part Number SI7848BDP-T1-GE3
PNEDA Part # SI7848BDP-T1-GE3
Description MOSFET N-CH 40V 47A PPAK SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 613,284
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI7848BDP-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI7848BDP-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI7848BDP-T1-GE3, SI7848BDP-T1-GE3 Datasheet (Total Pages: 13, Size: 367.79 KB)
PDFSI7848BDP-T1-GE3 Datasheet Cover
SI7848BDP-T1-GE3 Datasheet Page 2 SI7848BDP-T1-GE3 Datasheet Page 3 SI7848BDP-T1-GE3 Datasheet Page 4 SI7848BDP-T1-GE3 Datasheet Page 5 SI7848BDP-T1-GE3 Datasheet Page 6 SI7848BDP-T1-GE3 Datasheet Page 7 SI7848BDP-T1-GE3 Datasheet Page 8 SI7848BDP-T1-GE3 Datasheet Page 9 SI7848BDP-T1-GE3 Datasheet Page 10 SI7848BDP-T1-GE3 Datasheet Page 11

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SI7848BDP-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs9mOhm @ 16A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs50nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2000pF @ 20V
FET Feature-
Power Dissipation (Max)4.2W (Ta), 36W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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