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SI7900AEDN-T1-GE3

SI7900AEDN-T1-GE3

For Reference Only

Part Number SI7900AEDN-T1-GE3
PNEDA Part # SI7900AEDN-T1-GE3
Description MOSFET 2N-CH 20V 6A PPAK 1212-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,384
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI7900AEDN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI7900AEDN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI7900AEDN-T1-GE3, SI7900AEDN-T1-GE3 Datasheet (Total Pages: 12, Size: 531.5 KB)
PDFSI7900AEDN-T1-GE3 Datasheet Cover
SI7900AEDN-T1-GE3 Datasheet Page 2 SI7900AEDN-T1-GE3 Datasheet Page 3 SI7900AEDN-T1-GE3 Datasheet Page 4 SI7900AEDN-T1-GE3 Datasheet Page 5 SI7900AEDN-T1-GE3 Datasheet Page 6 SI7900AEDN-T1-GE3 Datasheet Page 7 SI7900AEDN-T1-GE3 Datasheet Page 8 SI7900AEDN-T1-GE3 Datasheet Page 9 SI7900AEDN-T1-GE3 Datasheet Page 10 SI7900AEDN-T1-GE3 Datasheet Page 11

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SI7900AEDN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Dual) Common Drain
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C6A
Rds On (Max) @ Id, Vgs26mOhm @ 8.5A, 4.5V
Vgs(th) (Max) @ Id900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max1.5W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® 1212-8 Dual
Supplier Device PackagePowerPAK® 1212-8 Dual

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