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SI7909DN-T1-GE3

SI7909DN-T1-GE3

For Reference Only

Part Number SI7909DN-T1-GE3
PNEDA Part # SI7909DN-T1-GE3
Description MOSFET 2P-CH 12V 5.3A 1212-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,508
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI7909DN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI7909DN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI7909DN-T1-GE3, SI7909DN-T1-GE3 Datasheet (Total Pages: 6, Size: 87.97 KB)
PDFSI7909DN-T1-GE3 Datasheet Cover
SI7909DN-T1-GE3 Datasheet Page 2 SI7909DN-T1-GE3 Datasheet Page 3 SI7909DN-T1-GE3 Datasheet Page 4 SI7909DN-T1-GE3 Datasheet Page 5 SI7909DN-T1-GE3 Datasheet Page 6

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SI7909DN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C5.3A
Rds On (Max) @ Id, Vgs37mOhm @ 7.7A, 4.5V
Vgs(th) (Max) @ Id1V @ 700µA
Gate Charge (Qg) (Max) @ Vgs24nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max1.3W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® 1212-8 Dual
Supplier Device PackagePowerPAK® 1212-8 Dual

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