SI7909DN-T1-GE3
For Reference Only
| Part Number | SI7909DN-T1-GE3 |
| PNEDA Part # | SI7909DN-T1-GE3 |
| Description | MOSFET 2P-CH 12V 5.3A 1212-8 |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 3,508 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 16 - May 21 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SI7909DN-T1-GE3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
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| Mfr. Part Number | SI7909DN-T1-GE3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
| Datasheet |
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- Delivery date: usually 2 to 7 working days.
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SI7909DN-T1-GE3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 5.3A |
| Rds On (Max) @ Id, Vgs | 37mOhm @ 7.7A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 700µA |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 1.3W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® 1212-8 Dual |
| Supplier Device Package | PowerPAK® 1212-8 Dual |
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 6A Rds On (Max) @ Id, Vgs 35mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 14.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 570pF @ 15V Power - Max 17.8W, 23W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® 1212-8 Dual Supplier Device Package PowerPAK® 1212-8 Dual |
