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SI7925DN-T1-E3

SI7925DN-T1-E3

For Reference Only

Part Number SI7925DN-T1-E3
PNEDA Part # SI7925DN-T1-E3
Description MOSFET 2P-CH 12V 4.8A 1212-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 8,010
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI7925DN-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI7925DN-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI7925DN-T1-E3, SI7925DN-T1-E3 Datasheet (Total Pages: 6, Size: 112.37 KB)
PDFSI7925DN-T1-GE3 Datasheet Cover
SI7925DN-T1-GE3 Datasheet Page 2 SI7925DN-T1-GE3 Datasheet Page 3 SI7925DN-T1-GE3 Datasheet Page 4 SI7925DN-T1-GE3 Datasheet Page 5 SI7925DN-T1-GE3 Datasheet Page 6

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SI7925DN-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C4.8A
Rds On (Max) @ Id, Vgs42mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max1.3W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® 1212-8 Dual
Supplier Device PackagePowerPAK® 1212-8 Dual

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