SI7972DP-T1-GE3
For Reference Only
| Part Number | SI7972DP-T1-GE3 |
| PNEDA Part # | SI7972DP-T1-GE3 |
| Description | MOSFET 2 N-CH 30V POWERPAK SO8 |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 94,296 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 7 - May 12 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
SI7972DP-T1-GE3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
|
| Mfr. Part Number | SI7972DP-T1-GE3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SI7972DP-T1-GE3 Datasheet
- where to find SI7972DP-T1-GE3
- Vishay Siliconix
- Vishay Siliconix SI7972DP-T1-GE3
- SI7972DP-T1-GE3 PDF Datasheet
- SI7972DP-T1-GE3 Stock
- SI7972DP-T1-GE3 Pinout
- Datasheet SI7972DP-T1-GE3
- SI7972DP-T1-GE3 Supplier
- Vishay Siliconix Distributor
- SI7972DP-T1-GE3 Price
- SI7972DP-T1-GE3 Distributor
SI7972DP-T1-GE3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 11A, 10V |
| Vgs(th) (Max) @ Id | 2.7V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1050pF @ 30V |
| Power - Max | 22W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SO-8 Dual |
| Supplier Device Package | PowerPAK® SO-8 Dual |
The Products You May Be Interested In
|
Manufacturer Toshiba Semiconductor and Storage Series U-MOSVIII-H FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate, 4V Drive Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 2A (Ta) Rds On (Max) @ Id, Vgs 103mOhm @ 2A, 10V Vgs(th) (Max) @ Id 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 3.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 290pF @ 15V Power - Max 1.8W (Ta) Operating Temperature 150°C Mounting Type Surface Mount Package / Case 6-SMD, Flat Leads Supplier Device Package 6-TSOP-F |
Manufacturer Advanced Linear Devices Inc. Series EPAD®, Zero Threshold™ FET Type 4 N-Channel, Matched Pair FET Feature Standard Drain to Source Voltage (Vdss) 10.6V Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs 500Ohm @ 4V Vgs(th) (Max) @ Id 20mV @ 1µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 2.5pF @ 5V Power - Max 500mW Operating Temperature 0°C ~ 70°C (TJ) Mounting Type Surface Mount Package / Case 16-SOIC (0.154", 3.90mm Width) Supplier Device Package 16-SOIC |
Manufacturer ON Semiconductor Series - FET Type 2 N-Channel (Dual) Common Drain FET Feature Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss) 24V Current - Continuous Drain (Id) @ 25°C 6A (Ta) Rds On (Max) @ Id, Vgs 45mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs 7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1.6W Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 4-XFBGA Supplier Device Package EFCP1313-4CC-037 |
Manufacturer Advanced Linear Devices Inc. Series EPAD®, Zero Threshold™ FET Type 2 N-Channel (Dual) Matched Pair FET Feature Standard Drain to Source Voltage (Vdss) 10.6V Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs 500Ohm @ 4V Vgs(th) (Max) @ Id 20mV @ 1µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 2.5pF @ 5V Power - Max 500mW Operating Temperature 0°C ~ 70°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOIC |
Manufacturer Diodes Incorporated Series - FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 2.6A Rds On (Max) @ Id, Vgs 130mOhm @ 3A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 218.7pF @ 25V Power - Max 1.7W Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
