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SI7998DP-T1-GE3

SI7998DP-T1-GE3

For Reference Only

Part Number SI7998DP-T1-GE3
PNEDA Part # SI7998DP-T1-GE3
Description MOSFET 2N-CH 30V 25A PPAK SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 22,620
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI7998DP-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI7998DP-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI7998DP-T1-GE3, SI7998DP-T1-GE3 Datasheet (Total Pages: 18, Size: 390.99 KB)
PDFSI7998DP-T1-GE3 Datasheet Cover
SI7998DP-T1-GE3 Datasheet Page 2 SI7998DP-T1-GE3 Datasheet Page 3 SI7998DP-T1-GE3 Datasheet Page 4 SI7998DP-T1-GE3 Datasheet Page 5 SI7998DP-T1-GE3 Datasheet Page 6 SI7998DP-T1-GE3 Datasheet Page 7 SI7998DP-T1-GE3 Datasheet Page 8 SI7998DP-T1-GE3 Datasheet Page 9 SI7998DP-T1-GE3 Datasheet Page 10 SI7998DP-T1-GE3 Datasheet Page 11

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SI7998DP-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C25A, 30A
Rds On (Max) @ Id, Vgs9.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1100pF @ 15V
Power - Max22W, 40W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual

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