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SI8409DB-T1-E1

SI8409DB-T1-E1

For Reference Only

Part Number SI8409DB-T1-E1
PNEDA Part # SI8409DB-T1-E1
Description MOSFET P-CH 30V 4.6A 2X2 4-MFP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 86,934
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 16 - Jun 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI8409DB-T1-E1 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI8409DB-T1-E1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI8409DB-T1-E1, SI8409DB-T1-E1 Datasheet (Total Pages: 10, Size: 233.46 KB)
PDFSI8409DB-T1-E1 Datasheet Cover
SI8409DB-T1-E1 Datasheet Page 2 SI8409DB-T1-E1 Datasheet Page 3 SI8409DB-T1-E1 Datasheet Page 4 SI8409DB-T1-E1 Datasheet Page 5 SI8409DB-T1-E1 Datasheet Page 6 SI8409DB-T1-E1 Datasheet Page 7 SI8409DB-T1-E1 Datasheet Page 8 SI8409DB-T1-E1 Datasheet Page 9 SI8409DB-T1-E1 Datasheet Page 10

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SI8409DB-T1-E1 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C4.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs46mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs26nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)1.47W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package4-Microfoot
Package / Case4-XFBGA, CSPBGA

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