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SI8417DB-T2-E1

SI8417DB-T2-E1

For Reference Only

Part Number SI8417DB-T2-E1
PNEDA Part # SI8417DB-T2-E1
Description MOSFET P-CH 12V 14.5A 2X2 6MFP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,524
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI8417DB-T2-E1 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI8417DB-T2-E1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI8417DB-T2-E1, SI8417DB-T2-E1 Datasheet (Total Pages: 8, Size: 118.66 KB)
PDFSI8417DB-T2-E1 Datasheet Cover
SI8417DB-T2-E1 Datasheet Page 2 SI8417DB-T2-E1 Datasheet Page 3 SI8417DB-T2-E1 Datasheet Page 4 SI8417DB-T2-E1 Datasheet Page 5 SI8417DB-T2-E1 Datasheet Page 6 SI8417DB-T2-E1 Datasheet Page 7 SI8417DB-T2-E1 Datasheet Page 8

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SI8417DB-T2-E1 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C14.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs21mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs57nC @ 5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds2220pF @ 6V
FET Feature-
Power Dissipation (Max)2.9W (Ta), 6.57W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-Micro Foot™ (1.5x1)
Package / Case6-MICRO FOOT®CSP

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