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SI8425DB-T1-E1

SI8425DB-T1-E1

For Reference Only

Part Number SI8425DB-T1-E1
PNEDA Part # SI8425DB-T1-E1
Description MOSFET P-CH 20V MICROFOOT
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 8,496
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI8425DB-T1-E1 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI8425DB-T1-E1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI8425DB-T1-E1, SI8425DB-T1-E1 Datasheet (Total Pages: 11, Size: 250.13 KB)
PDFSI8425DB-T1-E1 Datasheet Cover
SI8425DB-T1-E1 Datasheet Page 2 SI8425DB-T1-E1 Datasheet Page 3 SI8425DB-T1-E1 Datasheet Page 4 SI8425DB-T1-E1 Datasheet Page 5 SI8425DB-T1-E1 Datasheet Page 6 SI8425DB-T1-E1 Datasheet Page 7 SI8425DB-T1-E1 Datasheet Page 8 SI8425DB-T1-E1 Datasheet Page 9 SI8425DB-T1-E1 Datasheet Page 10 SI8425DB-T1-E1 Datasheet Page 11

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SI8425DB-T1-E1 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs23mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds2800pF @ 10V
FET Feature-
Power Dissipation (Max)1.1W (Ta), 2.7W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package4-WLCSP (1.6x1.6)
Package / Case4-UFBGA, WLCSP

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