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SI8441DB-T2-E1

SI8441DB-T2-E1

For Reference Only

Part Number SI8441DB-T2-E1
PNEDA Part # SI8441DB-T2-E1
Description MOSFET P-CH 20V 10.5A 2X2 6MFP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 6,642
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI8441DB-T2-E1 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI8441DB-T2-E1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI8441DB-T2-E1, SI8441DB-T2-E1 Datasheet (Total Pages: 9, Size: 115.61 KB)
PDFSI8441DB-T2-E1 Datasheet Cover
SI8441DB-T2-E1 Datasheet Page 2 SI8441DB-T2-E1 Datasheet Page 3 SI8441DB-T2-E1 Datasheet Page 4 SI8441DB-T2-E1 Datasheet Page 5 SI8441DB-T2-E1 Datasheet Page 6 SI8441DB-T2-E1 Datasheet Page 7 SI8441DB-T2-E1 Datasheet Page 8 SI8441DB-T2-E1 Datasheet Page 9

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SI8441DB-T2-E1 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Rds On (Max) @ Id, Vgs80mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs13nC @ 5V
Vgs (Max)±5V
Input Capacitance (Ciss) (Max) @ Vds600pF @ 10V
FET Feature-
Power Dissipation (Max)2.77W (Ta), 13W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-Micro Foot™ (1.5x1)
Package / Case6-UFBGA

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