Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI8461DB-T2-E1

SI8461DB-T2-E1

For Reference Only

Part Number SI8461DB-T2-E1
PNEDA Part # SI8461DB-T2-E1
Description MOSFET P-CH 20V MICROFOOT
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 24,072
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 17 - Jun 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI8461DB-T2-E1 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI8461DB-T2-E1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI8461DB-T2-E1, SI8461DB-T2-E1 Datasheet (Total Pages: 8, Size: 153.04 KB)
PDFSI8461DB-T2-E1 Datasheet Cover
SI8461DB-T2-E1 Datasheet Page 2 SI8461DB-T2-E1 Datasheet Page 3 SI8461DB-T2-E1 Datasheet Page 4 SI8461DB-T2-E1 Datasheet Page 5 SI8461DB-T2-E1 Datasheet Page 6 SI8461DB-T2-E1 Datasheet Page 7 SI8461DB-T2-E1 Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SI8461DB-T2-E1 Datasheet
  • where to find SI8461DB-T2-E1
  • Vishay Siliconix

  • Vishay Siliconix SI8461DB-T2-E1
  • SI8461DB-T2-E1 PDF Datasheet
  • SI8461DB-T2-E1 Stock

  • SI8461DB-T2-E1 Pinout
  • Datasheet SI8461DB-T2-E1
  • SI8461DB-T2-E1 Supplier

  • Vishay Siliconix Distributor
  • SI8461DB-T2-E1 Price
  • SI8461DB-T2-E1 Distributor

SI8461DB-T2-E1 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs100mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs24nC @ 8V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds610pF @ 10V
FET Feature-
Power Dissipation (Max)780mW (Ta), 1.8W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package4-Microfoot
Package / Case4-XFBGA, CSPBGA

The Products You May Be Interested In

Manufacturer

IXYS

Series

Polar™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

420mOhm @ 9A, 10V

Vgs(th) (Max) @ Id

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

49nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2500pF @ 25V

FET Feature

-

Power Dissipation (Max)

90W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220 Isolated Tab

Package / Case

TO-220-3 Full Pack, Isolated Tab

IRLR7821TRRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

65A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

10mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1030pF @ 15V

FET Feature

-

Power Dissipation (Max)

75W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IXFH67N10

IXYS

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

67A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

25mOhm @ 33.5A, 10V

Vgs(th) (Max) @ Id

4V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

260nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4500pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AD (IXFH)

Package / Case

TO-247-3

AUIRFN7110TR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

Automotive, AEC-Q101, HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

58A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

14.5mOhm @ 35A, 10V

Vgs(th) (Max) @ Id

4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

74nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3050pF @ 25V

FET Feature

-

Power Dissipation (Max)

4.3W (Ta), 125W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-PQFN (5x6)

Package / Case

8-PowerTDFN

BUK9Y59-60E,115

Nexperia

Manufacturer

Nexperia USA Inc.

Series

Automotive, AEC-Q101, TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

16.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V

Rds On (Max) @ Id, Vgs

52mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

2.1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

6.1nC @ 5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

715pF @ 25V

FET Feature

-

Power Dissipation (Max)

37W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LFPAK56, Power-SO8

Package / Case

SC-100, SOT-669

Recently Sold

VLP8040T-6R8M

VLP8040T-6R8M

TDK

FIXED IND 6.8UH 3.6A 32 MOHM SMD

AD8109ASTZ

AD8109ASTZ

Analog Devices

IC VIDEO CROSSPOINT SWIT 80LQFP

MMBT2369LT1G

MMBT2369LT1G

ON Semiconductor

TRANS NPN 15V 0.2A SOT23

REF192GS

REF192GS

Analog Devices

IC VREF SERIES 2.5V 8SOIC

7443556350

7443556350

Wurth Electronics

FIXED IND 3.5UH 22.5A 3.1 MOHM

LIS2DH12TR

LIS2DH12TR

STMicroelectronics

ACCEL 2-16G I2C/SPI 12LGA

LTV-817S-TA1-A

LTV-817S-TA1-A

Lite-On Inc.

OPTOISOLATR 5KV TRANSISTOR 4-SMD

MC33072DR2G

MC33072DR2G

ON Semiconductor

IC OPAMP GP 2 CIRCUIT 8SOIC

ND431825

ND431825

Powerex Inc.

SCR MOD ISO DUAL 1800V 250A

LTC3774EUHE#PBF

LTC3774EUHE#PBF

Linear Technology/Analog Devices

IC REG CTRLR BUCK 36QFN

ABM8G-28.63636MHZ-18-D2Y-T

ABM8G-28.63636MHZ-18-D2Y-T

Abracon

CRYSTAL 28.63636MHZ 18PF SMD

STL7N10F7

STL7N10F7

STMicroelectronics

MOSFET N-CH 100V 7A 8POWERFLAT