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SI8469DB-T2-E1

SI8469DB-T2-E1

For Reference Only

Part Number SI8469DB-T2-E1
PNEDA Part # SI8469DB-T2-E1
Description MOSFET P-CH 8V 3.6A MICRO
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,266
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI8469DB-T2-E1 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI8469DB-T2-E1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI8469DB-T2-E1, SI8469DB-T2-E1 Datasheet (Total Pages: 8, Size: 151.18 KB)
PDFSI8469DB-T2-E1 Datasheet Cover
SI8469DB-T2-E1 Datasheet Page 2 SI8469DB-T2-E1 Datasheet Page 3 SI8469DB-T2-E1 Datasheet Page 4 SI8469DB-T2-E1 Datasheet Page 5 SI8469DB-T2-E1 Datasheet Page 6 SI8469DB-T2-E1 Datasheet Page 7 SI8469DB-T2-E1 Datasheet Page 8

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SI8469DB-T2-E1 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)8V
Current - Continuous Drain (Id) @ 25°C4.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V
Rds On (Max) @ Id, Vgs64mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs17nC @ 4.5V
Vgs (Max)±5V
Input Capacitance (Ciss) (Max) @ Vds900pF @ 4V
FET Feature-
Power Dissipation (Max)780mW (Ta), 1.8W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package4-Microfoot
Package / Case4-UFBGA

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