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SI8497DB-T2-E1

SI8497DB-T2-E1

For Reference Only

Part Number SI8497DB-T2-E1
PNEDA Part # SI8497DB-T2-E1
Description MOSFET P-CH 30V 13A MICROFOOT
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 25,470
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI8497DB-T2-E1 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI8497DB-T2-E1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI8497DB-T2-E1, SI8497DB-T2-E1 Datasheet (Total Pages: 8, Size: 173.07 KB)
PDFSI8497DB-T2-E1 Datasheet Cover
SI8497DB-T2-E1 Datasheet Page 2 SI8497DB-T2-E1 Datasheet Page 3 SI8497DB-T2-E1 Datasheet Page 4 SI8497DB-T2-E1 Datasheet Page 5 SI8497DB-T2-E1 Datasheet Page 6 SI8497DB-T2-E1 Datasheet Page 7 SI8497DB-T2-E1 Datasheet Page 8

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SI8497DB-T2-E1 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2V, 4.5V
Rds On (Max) @ Id, Vgs53mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs49nC @ 10V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds1320pF @ 15V
FET Feature-
Power Dissipation (Max)2.77W (Ta), 13W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-microfoot
Package / Case6-UFBGA

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