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SI8902AEDB-T2-E1

SI8902AEDB-T2-E1

For Reference Only

Part Number SI8902AEDB-T2-E1
PNEDA Part # SI8902AEDB-T2-E1
Description N-CHANNEL 24-V (D-S) MOSFET
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 6,210
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI8902AEDB-T2-E1 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI8902AEDB-T2-E1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI8902AEDB-T2-E1, SI8902AEDB-T2-E1 Datasheet (Total Pages: 11, Size: 245.9 KB)
PDFSI8902AEDB-T2-E1 Datasheet Cover
SI8902AEDB-T2-E1 Datasheet Page 2 SI8902AEDB-T2-E1 Datasheet Page 3 SI8902AEDB-T2-E1 Datasheet Page 4 SI8902AEDB-T2-E1 Datasheet Page 5 SI8902AEDB-T2-E1 Datasheet Page 6 SI8902AEDB-T2-E1 Datasheet Page 7 SI8902AEDB-T2-E1 Datasheet Page 8 SI8902AEDB-T2-E1 Datasheet Page 9 SI8902AEDB-T2-E1 Datasheet Page 10 SI8902AEDB-T2-E1 Datasheet Page 11

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SI8902AEDB-T2-E1 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)24V
Current - Continuous Drain (Id) @ 25°C11A
Rds On (Max) @ Id, Vgs28mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs-
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max5.7W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-UFBGA
Supplier Device Package6-Micro Foot™ (1.5x1)

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