Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI8902AEDB-T2-E1

SI8902AEDB-T2-E1

For Reference Only

Part Number SI8902AEDB-T2-E1
PNEDA Part # SI8902AEDB-T2-E1
Description N-CHANNEL 24-V (D-S) MOSFET
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 6,210
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI8902AEDB-T2-E1 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI8902AEDB-T2-E1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI8902AEDB-T2-E1, SI8902AEDB-T2-E1 Datasheet (Total Pages: 11, Size: 245.9 KB)
PDFSI8902AEDB-T2-E1 Datasheet Cover
SI8902AEDB-T2-E1 Datasheet Page 2 SI8902AEDB-T2-E1 Datasheet Page 3 SI8902AEDB-T2-E1 Datasheet Page 4 SI8902AEDB-T2-E1 Datasheet Page 5 SI8902AEDB-T2-E1 Datasheet Page 6 SI8902AEDB-T2-E1 Datasheet Page 7 SI8902AEDB-T2-E1 Datasheet Page 8 SI8902AEDB-T2-E1 Datasheet Page 9 SI8902AEDB-T2-E1 Datasheet Page 10 SI8902AEDB-T2-E1 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SI8902AEDB-T2-E1 Datasheet
  • where to find SI8902AEDB-T2-E1
  • Vishay Siliconix

  • Vishay Siliconix SI8902AEDB-T2-E1
  • SI8902AEDB-T2-E1 PDF Datasheet
  • SI8902AEDB-T2-E1 Stock

  • SI8902AEDB-T2-E1 Pinout
  • Datasheet SI8902AEDB-T2-E1
  • SI8902AEDB-T2-E1 Supplier

  • Vishay Siliconix Distributor
  • SI8902AEDB-T2-E1 Price
  • SI8902AEDB-T2-E1 Distributor

SI8902AEDB-T2-E1 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)24V
Current - Continuous Drain (Id) @ 25°C11A
Rds On (Max) @ Id, Vgs28mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs-
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max5.7W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-UFBGA
Supplier Device Package6-Micro Foot™ (1.5x1)

The Products You May Be Interested In

BSM180D12P3C007

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

2 N-Channel (Dual)

FET Feature

Silicon Carbide (SiC)

Drain to Source Voltage (Vdss)

1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C

180A (Tc)

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

5.6V @ 50mA

Gate Charge (Qg) (Max) @ Vgs

-

Input Capacitance (Ciss) (Max) @ Vds

900pF @ 10V

Power - Max

880W

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Package / Case

Module

Supplier Device Package

Module

TPCP8203(TE85L,F)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

4.7A

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

360mW

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SMD, Flat Lead

Supplier Device Package

PS-8 (2.9x2.4)

DMC3071LVT-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N and P-Channel Complementary

FET Feature

Standard

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

4.6A (Ta), 3.3A (Ta)

Rds On (Max) @ Id, Vgs

50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

4.5nC @ 10V, 6.5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

190pF @ 15V, 254pF @ 15V

Power - Max

700mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Supplier Device Package

TSOT-26

FDG6303N

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

500mA

Rds On (Max) @ Id, Vgs

450mOhm @ 500mA, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

2.3nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

50pF @ 10V

Power - Max

300mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

SC-88 (SC-70-6)

DMN5L06VKQ-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

Automotive, AEC-Q101

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

50V

Current - Continuous Drain (Id) @ 25°C

280mA (Ta)

Rds On (Max) @ Id, Vgs

2Ohm @ 50mA, 5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

-

Input Capacitance (Ciss) (Max) @ Vds

50pF @ 25V

Power - Max

250mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Supplier Device Package

SOT-563

Recently Sold

AD9765ASTZ

AD9765ASTZ

Analog Devices

IC DAC 12BIT A-OUT 48LQFP

SMCJ36A-E3/57T

SMCJ36A-E3/57T

Vishay Semiconductor Diodes Division

TVS DIODE 36V 58.1V DO214AB

EVQ-P7C01P

EVQ-P7C01P

Panasonic Electronic Components

SWITCH TACTILE SPST-NO 0.05A 12V

STL7N10F7

STL7N10F7

STMicroelectronics

MOSFET N-CH 100V 7A 8POWERFLAT

GD25Q80CSIG

GD25Q80CSIG

GigaDevice Semiconductor (HK) Limited

NOR FLASH

PMEG3010BEP,115

PMEG3010BEP,115

Nexperia

DIODE SCHOTTKY 30V 1A SOD128

KSZ9031RNXIC-TR

KSZ9031RNXIC-TR

Microchip Technology

IC TRANSCEIVER FULL 4/4 48QFN

BLM18PG121SN1D

BLM18PG121SN1D

Murata

FERRITE BEAD 120 OHM 0603 1LN

AD1580ART-REEL

AD1580ART-REEL

Analog Devices

IC VREF SHUNT 1.225V SOT23

M29W200BB70N1

M29W200BB70N1

Micron Technology Inc.

IC FLASH 2M PARALLEL 48TSOP

NTCS0603E3103FMT

NTCS0603E3103FMT

Vishay BC Components

THERMISTOR NTC 10KOHM 3610K 0603

BLM21PG221SN1D

BLM21PG221SN1D

Murata

FERRITE BEAD 220 OHM 0805 1LN