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SI9926BDY-T1-GE3

SI9926BDY-T1-GE3

For Reference Only

Part Number SI9926BDY-T1-GE3
PNEDA Part # SI9926BDY-T1-GE3
Description MOSFET 2N-CH 20V 6.2A 8-SOIC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,002
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI9926BDY-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI9926BDY-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI9926BDY-T1-GE3, SI9926BDY-T1-GE3 Datasheet (Total Pages: 6, Size: 106.05 KB)
PDFSI9926BDY-T1-GE3 Datasheet Cover
SI9926BDY-T1-GE3 Datasheet Page 2 SI9926BDY-T1-GE3 Datasheet Page 3 SI9926BDY-T1-GE3 Datasheet Page 4 SI9926BDY-T1-GE3 Datasheet Page 5 SI9926BDY-T1-GE3 Datasheet Page 6

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SI9926BDY-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C6.2A
Rds On (Max) @ Id, Vgs20mOhm @ 8.2A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max1.14W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

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